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Proceedings Paper

CD-SAXS measurements using laboratory-based and synchrotron-based instruments
Author(s): Chengqing Wang; Kwang-Woo Choi; Wei-En Fu; Derek L. Ho; Ronald L. Jones; Christopher Soles; Eric K. Lin; Wen-Li Wu; James S. Clarke; Benjamin Bunday
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Paper Abstract

Critical dimension small angle X-ray scattering (CD-SAXS) is a metrology platform capable of measuring the average cross section and line width roughness (LWR) with a sub-nm precision in test patterns with line widths ranging from 10 to 500 nm. The X-ray diffraction intensities from a collimated X-ray beam of sub-Angstrom wavelength were collected and analyzed to determine line width, pitch, sidewall angle, LWR, and others structural parameters. The capabilities of lab-scale and synchrotron-based CD-SAXS tools for LWR characterization were tested by measuring a set of identical patterns with designed roughness amplitude and frequency. These test patterns were fabricated using EUV lithography with sub-50 nm linewidths. To compensate for the limited photon flux from the lab-based X-ray source, the incident beam of the lab system was collimated to a less extent than the synchrotron beam-based tool. Consequently, additional desmearing is needed to extract information from data obtained from lab-based equipment. We report the weighted nonlinear least-squares algorithm developed for this purpose, in addiiton to a comparison between the results obtained from our lab system and the synchrotron beam-based tool.

Paper Details

Date Published: 24 March 2008
PDF: 7 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69222E (24 March 2008); doi: 10.1117/12.773774
Show Author Affiliations
Chengqing Wang, National Institute of Standards and Technology (United States)
Kwang-Woo Choi, Intel Corp. (United States)
Wei-En Fu, National Institute of Standards and Technology (United States)
Derek L. Ho, National Institute of Standards and Technology (United States)
Ronald L. Jones, National Institute of Standards and Technology (United States)
Christopher Soles, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Wen-Li Wu, National Institute of Standards and Technology (United States)
James S. Clarke, Intel Corp. (United States)
Benjamin Bunday, International SEMATECH Manufacturing Initiative (United States)


Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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