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Proceedings Paper

Recess integration of micro-cleaved laser diode platelets with dielectric waveguides on silicon
Author(s): Clifton G. Fonstad; Joseph J. Rumpler; Edward R. Barkley; James M. Perkins; Shaya Famenini
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Paper Abstract

Ongoing research directed at integrating 1.55 μm III-V ridge waveguide gain elements (i.e. diode lasers and semiconductor optical amplifiers) co-axially aligned with, and coupled to, silicon oxy-nitride waveguides on silicon substrates is presented. The integration techniques used are highly modular and consistent with fabricating waveguides on Si-CMOS wafers and doing the integration of the III-V gain elements after all standard front- and back-end Si processing has been completed. A novel micro-cleaving technique is used to produce active ridge waveguide platelets on the order of 6 µm thick and 100 μm wide, with precisely controlled lengths, in the current work 300 ± 1 μm, and cleaved end facets. Typical ridge guide micro-cleaved platelet lasers have thresholds under 30 mA. Micro-cleaved platelets are bonded within dielectric recesses etched through the oxy-nitride (SiOxNy) waveguides on a wafer so the ridge and SiOxNy waveguides are co-axially aligned. Transmission measurements indicate coupling losses are as low as 5 db with air filling the gaps between the waveguide ends, and measurements made through filled gaps indicate that the coupling losses can be reduced to below 1.5 dB with a high index (n = 2.2) dielectric fill. Simulations indicate that with further optimization of the mode profile in the III-V waveguide the loss can be reduced to below 1 dB. The paper concludes with a discussion of device design and optimization for co-axial recess integration, and with a comparison of co-axial coupling with the hybrid evanescent vertical coupling III-V/Si integration approach recently introduced by researchers at UCSB and Intel.

Paper Details

Date Published: 29 January 2008
PDF: 8 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090O (29 January 2008); doi: 10.1117/12.773594
Show Author Affiliations
Clifton G. Fonstad, Massachusetts Institute of Technology (United States)
Joseph J. Rumpler, Massachusetts Institute of Technology (United States)
Edward R. Barkley, Massachusetts Institute of Technology (United States)
James M. Perkins, Massachusetts Institute of Technology (United States)
Shaya Famenini, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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