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Proceedings Paper

Linewidth roughness and cross-sectional measurements of sub-50 nm structures with CD-SAXS and CD-SEM
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Paper Abstract

Critical dimension small angle X-ray scattering (CD-SAXS) is a measurement platform that is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub-nm precision. These capabilities are obtained by measuring and modeling the scattering intensities of a collimated X-ray beam with sub-nanometer wavelength from a periodic pattern, such as those found in optical scatterometry targets. In this work, we evaluated the capability a synchrotron-based CD-SAXS measurements to characterize linewidth roughness (LWR) by measuring periodic line/space patterns fabricated with extreme ultraviolet (EUV) lithography with sub-50 nm linewidths and designed with programmed roughness amplitude and frequency. For these patterns, CD-SAXS can provide high precision data on cross-section dimensions, including sidewall angle, line height, line width, and pitch, as well as the LWR amplitude. We also discuss the status of ongoing efforts to compare quantitatively the CD-SAXS data with topdown critical dimension scanning electron microscopy (CD-SEM) measurements.

Paper Details

Date Published: 24 March 2008
PDF: 8 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221Z (24 March 2008); doi: 10.1117/12.773558
Show Author Affiliations
Chengqing Wang, National Institute of Standards and Technology (United States)
Kwang-Woo Choi, Intel Corp. (United States)
Ronald L. Jones, National Institute of Standards and Technology (United States)
Christopher Soles, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
James S. Clarke, Intel Corp. (United States)
John S. Villarrubia, National Institute of Standards and Technology (United States)
Benjamin Bunday, International SEMATECH Manufacturing Initiative (United States)


Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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