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Proceedings Paper

Stark effect at dislocations in silicon for modulation of a 1.5-µm light emitter
Author(s): Martin Kittler; Manfred Reiche; Teimuraz Mchedlidze; Tzanimir Arguirov; Guobin Jia; Winfried Seifert; Stephan Suckow; Thomas Wilhelm
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Paper Abstract

A MOS-LED and a p-n LED emitting based on the dislocation-related luminescence (DRL) at 1.5 micron were already demonstrated by the authors. Here we report recent observation of the Stark effect for the DRL in Si. Namely, a red/blue-shift of the DRL peak positions was observed in electro- and photo-luminescence when the electric field in the pn-LED was increased/lowered. Fitting the experimental data yields a strong characteristic coefficient of 0.0186 meV/(kV/cm)2. This effect may allow realization of a novel Si-based emitter and modulator combined in a single device.

Paper Details

Date Published: 13 February 2008
PDF: 7 pages
Proc. SPIE 6898, Silicon Photonics III, 68980G (13 February 2008); doi: 10.1117/12.773295
Show Author Affiliations
Martin Kittler, IHP (Germany)
IHP/BTU Joint Lab. (Germany)
Manfred Reiche, Max-Planck-Institut für Mikrostrukturphysik (Germany)
Teimuraz Mchedlidze, IHP/BTU Joint Lab. (Germany)
Tzanimir Arguirov, IHP (Germany)
IHP/BTU Joint Lab. (Germany)
Guobin Jia, IHP (Germany)
IHP/BTU Joint Lab. (Germany)
Winfried Seifert, IHP (Germany)
IHP/BTU Joint Lab. (Germany)
Stephan Suckow, IHP/BTU Joint Lab. (Germany)
Thomas Wilhelm, Max-Planck-Institut für Mikrostrukturphysik (Germany)


Published in SPIE Proceedings Vol. 6898:
Silicon Photonics III
Joel A. Kubby; Graham T. Reed, Editor(s)

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