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Proceedings Paper

Implementation of spectroscopic critical dimension (SCD) for leveling inline monitor of ASML 193nm scanner
Author(s): W. K. Lin; Mike Yeh
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Paper Abstract

Gate critical dimension (CD) common window (UDOF) is less than 0.25μm below 110nm-node. It's a serious impact by scanner leveling tilt due to it'll result in defocus, profile changed and then suffer etch bias. Here, we provide an easy and convenient method to monitor daily leveling tilt of ASML 193nm by SCD. Of course, it can also be used for other vendors' scanner including DUV 248nm, 193nm & immersion 193nm. SCD can measure side wall angle (SWA) of photo resist and it's a factor of focus. We can design one mask with SCD grating pattern and layout them at four corners of mask. Collect the SWA data of four corners by different tilt at x and y direction and then we can find the correlation within SWA bias and leveling. It's an easy method to monitor scanner leveling issue and early alert for excursion case.

Paper Details

Date Published: 25 March 2008
PDF: 9 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223S (25 March 2008); doi: 10.1117/12.773226
Show Author Affiliations
W. K. Lin, United Microelectronics Corp. (Taiwan)
Mike Yeh, United Microelectronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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