Share Email Print
cover

Proceedings Paper

Low-k n&k variation impact on CD accuracy of scatterometry
Author(s): Yan Chen; Masahiro Yamamoto; Dmitriy Likhachev; Gang He; Akihiro Sonoda; Vi Vuong
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Scatterometry is one of the advanced optical metrology techniques has been implemented in semiconductor manufacturing for monitoring and controlling critical dimensions, sidewall angle and grating heights as well as thicknesses of underlying films, due to its non-destructive nature, high measurement precision and speed. In traditional scatterometry approach, the optical properties (n&k's) of film stack have been used as fixed inputs in a scatterometry model, therefore, the process engineers have to assume that there is no significant impact on measurement results by small deviation from pre-extracted n&k's. However, n&k's of actual production wafers will always vary from the fixed values used in the model. The magnitude of the variations and its impact on the accuracy of scatterometry measurements has not been well-characterized yet. In this study, a low-k dielectric stack with noticeable n&k's variations was generated. The low-k dielectric stack has the refractive index (n) variation around 0.01 @ 633nm within a wafer, and is under two layers of patterned PR and BARC. Different scatterometry models with fixed and floated n&k's have been analyzed. Although comparable repeatability was obtained with either fixed or floated n&k's model, the correlation (R2) to CD-SEM result has been improved by floating n&k in the model in comparison to that of fixed n&k model. In this paper, we also discuss some differences in applying various optical models (i.e, EMA and Cauchy) in scatterometry measurements.

Paper Details

Date Published: 25 March 2008
PDF: 5 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223R (25 March 2008); doi: 10.1117/12.773133
Show Author Affiliations
Yan Chen, Timbre Technologies, Inc. (United States)
Masahiro Yamamoto, Tokyo Electron, Ltd. (Japan)
Dmitriy Likhachev, Timbre Technologies, Inc. (United States)
Gang He, Timbre Technologies, Inc. (United States)
Akihiro Sonoda, Tokyo Electron, Ltd. (Japan)
Vi Vuong, Timbre Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

© SPIE. Terms of Use
Back to Top