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Proceedings Paper

KrF bilayer resist defects: cause, analysis, and reduction
Author(s): Brian Osborn; Gloria Quinto; Zhanping Zhang; Cherry Tang; Stacy Sakai; Go Nagatani; Anna Minvielle
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Paper Abstract

Dual damascene processing for back end of the line (BEOL) layers can employ bilayer film stack approaches for lithographic patterning. These bilayer resist systems are more prevalent for KrF layers and have many unique characteristics, including silicon-containing photoresists and gap fill underlayer material that must also act as a bottom anti-reflective coating (BARC). Bilayer resists pattern for copper deposition; as such, defect levels are a critical concern, as any post-patterning bridging or residue defects can often times render an entire die inoperable due to electrical shorts or breaks. Here, two such defect types were found: missing resist patterns and resist residue. Through several experiments and with process optimization, the defect origins were elucidated and the defects themselves significantly reduced. This work will detail the examination, root causes and eventual elimination of these significant bilayer resist defects.

Paper Details

Date Published: 26 March 2008
PDF: 11 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232N (26 March 2008); doi: 10.1117/12.773118
Show Author Affiliations
Brian Osborn, Spansion, Inc. (United States)
Gloria Quinto, Spansion, Inc. (United States)
Zhanping Zhang, Spansion, Inc. (United States)
Cherry Tang, Spansion, Inc. (United States)
Stacy Sakai, Spansion, Inc. (United States)
Go Nagatani, Spansion, Inc. (United States)
Anna Minvielle, Spansion, Inc. (United States)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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