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Proceedings Paper

Validation and application of a mask model for inverse lithography
Author(s): Thuc H. Dam; Xin Zhou; Dongxue Chen; Anthony Adamov; Danping Peng; Bob Gleason
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Paper Abstract

As photomask critical dimensions shrink significantly below the exposure wavelength and the angle of off-axis illumination increases, the use of Kirchhoff thin mask approximation cannot capture diffraction and polarization effects that occur at a topographical mask surface. Such approximation errors result in inaccurate models that lead to poor prediction for image simulation, which can waste time and money during lithographic process development cycle. The real effects of a thick mask can be simulated using finite difference time domain (FDTD) electromagnetic (EM) field calculations, or be better approximated with less error using such techniques such as boundary layer or various Fourier transformation techniques.

Paper Details

Date Published: 19 March 2008
PDF: 8 pages
Proc. SPIE 6925, Design for Manufacturability through Design-Process Integration II, 69251J (19 March 2008); doi: 10.1117/12.773081
Show Author Affiliations
Thuc H. Dam, Luminescent Technologies (United States)
Xin Zhou, Luminescent Technologies (United States)
Dongxue Chen, Luminescent Technologies (United States)
Anthony Adamov, Luminescent Technologies (United States)
Danping Peng, Luminescent Technologies (United States)
Bob Gleason, Luminescent Technologies (United States)


Published in SPIE Proceedings Vol. 6925:
Design for Manufacturability through Design-Process Integration II
Vivek K. Singh; Michael L. Rieger, Editor(s)

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