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Proceedings Paper

Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano-imprint lithography
Author(s): Hyun Wook Ro; Ronald L. Jones; Huagen Peng; Hae-Jeong Lee; Eric K. Lin; Alamgir Karim; Do Y. Yoon; David W. Gidley; Christopher L. Soles
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Paper Abstract

Direct patterning of low-dielectric constant (low-k) materials via nanoimprint lithography (NIL) has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. We report direct imprinting of sub-100 nm features into a high modulus methylsilsesquioxane-based organosilicate glass (OSG) material. An excellent fidelity of the pattern transfer process is quantified with nm precision using critical dimension small angle X-ray scattering (CD-SAXS) and specular X-ray reflectivity (SXR). X-ray porosimetry (XRP) and positron annihilation lifetime spectroscopy (PALS) measurements indicate that imprinting increases the inherent microporosity of the methylsilsequioxane-based OSG material. When a porogen (pore generating material) is added, imprinting decreases the population of mesopores associated with the porogen while retaining the enhanced microporosity. The net effect is a decrease the pore interconnectivity. There is also evidence for a sealing effect that is interpreted as an imprint induced dense skin at the surface of the porous pattern.

Paper Details

Date Published: 28 March 2008
PDF: 11 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211M (28 March 2008); doi: 10.1117/12.773004
Show Author Affiliations
Hyun Wook Ro, NIST (United States)
Ronald L. Jones, NIST (United States)
Huagen Peng, Univ. of Michigan (United States)
Hae-Jeong Lee, NIST (United States)
Eric K. Lin, NIST (United States)
Alamgir Karim, NIST (United States)
Do Y. Yoon, Seoul National Univ. (South Korea)
David W. Gidley, Univ. of Michigan (United States)
Christopher L. Soles, NIST (United States)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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