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Proceedings Paper

New high-index fluids: exploiting anomalous dispersion for immersion lithography
Author(s): Elizabeth A. Costner; Kazuya Matsumoto; Brian K. Long; J. Christopher Taylor; William Wojtczak; C. Grant Willson
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Paper Abstract

In immersion lithography a fluid with a high refractive index is used to enable increases in the numerical aperture (NA) of the imaging system and therefore decrease the minimum feature size that can be patterned. Water has been used in first generation immersion lithography at 193 nm for the 45 nm node. To generate still smaller features, fluids with a higher index than water are needed. Both saturated hydrocarbons and a new class of salts with incorporated alkane groups have been studied. Both of these types of fluids possess the "adjustable" absorbance edge behavior needed to provide a fluid with a high index and low absorbance at 193 nm. Since alkanes have physical properties that are difficult to integrate into current fluid handling systems, the aqueous solutions are particularly attractive as more semiconductor-friendly fluids. A full characterization of the optical properties of these fluids will be reported, as well as physical property results and confirmation of the feasibility of 32 nm l/s imaging with 1.5 NA using the salt solutions.

Paper Details

Date Published: 26 March 2008
PDF: 12 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230B (26 March 2008); doi: 10.1117/12.772979
Show Author Affiliations
Elizabeth A. Costner, The Univ. of Texas at Austin (United States)
Kazuya Matsumoto, The Univ. of Texas at Austin (United States)
Tokyo Institute of Technology (Japan)
Brian K. Long, The Univ. of Texas at Austin (United States)
J. Christopher Taylor, The Univ. of Texas at Austin (United States)
William Wojtczak, SACHEM, Inc. (United States)
C. Grant Willson, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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