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Proceedings Paper

EUV mask reflectivity measurements with micron-scale spatial resolution
Author(s): Kenneth A. Goldberg; Senajith B. Rekawa; Charles D. Kemp; Anton Barty; Erik Anderson; Patrick Kearney; Hakseung Han
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Paper Abstract

The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. We describe the unique measurement capabilities of a prototype actinic (EUV wavelength) microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. We describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects.

Paper Details

Date Published: 21 March 2008
PDF: 9 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69213U (21 March 2008); doi: 10.1117/12.772971
Show Author Affiliations
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Senajith B. Rekawa, Lawrence Berkeley National Lab. (United States)
Charles D. Kemp, Lawrence Berkeley National Lab. (United States)
Anton Barty, Lawrence Livermore National Lab. (United States)
Erik Anderson, Lawrence Berkeley National Lab. (United States)
Patrick Kearney, SEMATECH (United States)
Hakseung Han, SEMATECH (United States)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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