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Proceedings Paper

Minimizing linewidth roughness for 22-nm node patterning with step-and-flash imprint lithography
Author(s): Gerard M. Schmid; Niyaz Khusnatdinov; Cynthia B. Brooks; Dwayne LaBrake; Ecron Thompson; Douglas J. Resnick
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Paper Abstract

Imprint lithography achieves high resolution patterning with low roughness by avoiding the tradeoff between pattern quality and process throughput - a tradeoff that limits the capability of photolithography with chemically amplified resists. This work demonstrates the use of ZEP520A electron-beam resist for fabrication of imprint masks (templates). It is shown that high resolution, low roughness patterns can be robustly transferred from imprint mask to imprint resist, and from imprint resist through etch transfer into the underlying substrate. Through improvements to the electron-beam patterning process, 22 nm half-pitch patterns are routinely achieved with linewidth roughness (LWR) of just 2.6 nm, 3σ

Paper Details

Date Published: 14 March 2008
PDF: 11 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692109 (14 March 2008); doi: 10.1117/12.772956
Show Author Affiliations
Gerard M. Schmid, Molecular Imprints, Inc. (United States)
Niyaz Khusnatdinov, Molecular Imprints, Inc. (United States)
Cynthia B. Brooks, Molecular Imprints, Inc. (United States)
Dwayne LaBrake, Molecular Imprints, Inc. (United States)
Ecron Thompson, Molecular Imprints, Inc. (United States)
Douglas J. Resnick, Molecular Imprints, Inc. (United States)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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