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Proceedings Paper

Resist freezing process for double exposure lithography
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Paper Abstract

In this study, we have developed a thermal freezing process to prevent intermixing between 1st patterned positive resist and 2nd positive resist. Based on solvent solubility switch characteristic of polymer after higher temperature bake, a prototype of polymer consisting of methyladmantane mathacrylate, norbornanecarbo lactone mathacrylate and hydroxyl admantane mathacrylate was selected for resist-on-resist double exposure experiment to prevent the intermixing between layers. Photo sensitivity shifting of this prototype resist after post develop bake further facilitates the design by preventing 1st layer resist distortion from 2nd exposure. Lastly, through composition and formulation optimization, 35nm L/S patterns were successfully demonstrated by using a 1.2NA stepper.

Paper Details

Date Published: 26 March 2008
PDF: 10 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230G (26 March 2008); doi: 10.1117/12.772852
Show Author Affiliations
Kuang-Jung Rex Chen, IBM Semiconductor Research and Development Ctr. (United States)
Wu-Song Huang, IBM Semiconductor Research and Development Ctr. (United States)
Wai-Kin Li, IBM Semiconductor Research and Development Ctr. (United States)
P. Rao Varanasi, IBM Semiconductor Research and Development Ctr. (United States)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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