Share Email Print

Proceedings Paper

An approach for nanometer trench and hole formation
Author(s): Zhongyan Wang; Ming Sun; Xilin Peng; Thomas Boonstra
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Patterning trench-hole type of structures with CD in nanometer dimension is very challenging in optical lithography due to limited depth of focus (DOF) and exposure latitude (EL). We have proposed an integration process to convert sub- 100nm line/post type of structure to trench/hole type of structure. The proposed method as well as its variations may have various potential applications, such as formation of plated perpendicular magnetic writer pole, bottom-up nanointerconnect, nano-wires and other out-of-plane nano-structures. We have shown the feasibility for formation of nanotrenches in various sub-100nm dimensions. Magnetic writer pole with 50nm critical dimensions (CD) and wellcontrolled sidewalls was demonstrated by using this approach. The minimum CD of the starting isolated line/post feature determines the minimum CD of the trench/hole structure.

Paper Details

Date Published: 7 March 2008
PDF: 8 pages
Proc. SPIE 6924, Optical Microlithography XXI, 692447 (7 March 2008); doi: 10.1117/12.772778
Show Author Affiliations
Zhongyan Wang, Seagate Technology (United States)
Ming Sun, Seagate Technology (United States)
Xilin Peng, Seagate Technology (United States)
Thomas Boonstra, Seagate Technology (United States)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

© SPIE. Terms of Use
Back to Top