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Proceedings Paper

Resolution, LER, and sensitivity limitations of photoresists
Author(s): Gregg M. Gallatin; Patrick Naulleau; Dimitra Niakoula; Robert Brainard; Elsayed Hassanein; Richard Matyi; Jim Thackeray; Kathleen Spear; Kim Dean
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Paper Abstract

Recent experimental results and modeling both indicate that whereas it is possible to optimize a photoresist and process to achieve separately a desired resolution or line edge roughness or sensitivity, it will be difficult if not impossible to achieve all three simultaneously using current standard chemically amplified photoresists and processes. This tradeoff among Resolution, Line Edge Roughness (LER) and Sensitivity is termed the RLS tradeoff. Here we review the progress to date of a SEMATECH-funded program to develop an experimentally verified model of the relationship among resolution, LER and sensitivity and use it to determine approaches for "breaking" the RLS tradeoff.

Paper Details

Date Published: 21 March 2008
PDF: 11 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211E (21 March 2008); doi: 10.1117/12.772763
Show Author Affiliations
Gregg M. Gallatin, Applied Math Solutions, LLC (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Univ. at Albany (United States)
Dimitra Niakoula, Lawrence Berkeley National Lab. (United States)
Robert Brainard, Univ. at Albany (United States)
Elsayed Hassanein, Univ. at Albany (United States)
Richard Matyi, Rohm and Haas Microelectronics (United States)
Jim Thackeray, Rohm and Haas Microelectronics (United States)
Kathleen Spear, Rohm and Haas Microelectronics (United States)
Kim Dean, SEMATECH, Inc. (United States)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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