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Proceedings Paper

Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios
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Paper Abstract

The introduction of double patterning and double exposure technologies, especially in combination with hyper NA, increases the importance of wafer topography phenomena. Rigorous electromagnetic field (EMF) simulations of two beam interference exposures over non-planar wafers are used to explore the impact of the hardmask material and pattern on resulting linewidths and swing curves after the second lithography step. Moreover, the impact of the optical material contrast between the frozen and unfrozen resist in a pattern freezing process and the effect of a reversible contrast enhancement layer on the superposition of two subsequent lithographic exposures are simulated. The described simulation approaches can be used for the optimization of wafer stack configurations for double patterning and to identify appropriate optical material properties for alternative double patterning and double exposure techniques.

Paper Details

Date Published: 1 April 2008
PDF: 12 pages
Proc. SPIE 6924, Optical Microlithography XXI, 692452 (1 April 2008); doi: 10.1117/12.772741
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Peter Evanschitzky, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Tim Fühner, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Thomas Schnattinger, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Cheng-Bai Xu, Rohm and Haas Co. (United States)
Chuck Szmanda, Rohm and Haas Co. (United States)


Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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