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Proceedings Paper

Investigation of sensitivity of extreme ultraviolet resists to out-of-band radiation
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Paper Abstract

A method to evaluate the sensitivity of photoresists used for extreme ultraviolet (EUV) lithography has been developed. EUV sources produce out-of-band radiation and the reflective optics used in EUV tools reflect some of this out-of-band light on the wafer plane. The effect of exposing these photoresists to this unwanted light can reduce the image contrast on the wafer, and thereby reduce the image quality of the printed images. To examine the wavelengths of light that may have an adverse effect on these resists, a deuterium light source mounted with a monochromator has been designed to determine how sensitive these photoresists are to light at selected wavelengths in the range 190-650 nm.

Paper Details

Date Published: 21 March 2008
PDF: 9 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69213L (21 March 2008); doi: 10.1117/12.772695
Show Author Affiliations
Chimaobi Mbanaso, Univ. at Albany (United States)
Gregory Denbeaux, Univ. at Albany (United States)
Kim Dean, SEMATECH (United States)
Robert Brainard, Univ. at Albany (United States)
Seth Kruger, Univ. at Albany (United States)
Elsayed Hassanein, Univ. at Albany (United States)


Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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