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Proceedings Paper

Non-chemically amplified resists for 193 nm lithography
Author(s): Isao Nishimura; William H. Heath; Kazuya Matsumoto; Wei-Lun Jen; Saul S. Lee; Colin Neikirk; Tsutomu Shimokawa; Koji Ito; Koichi Fujiwara; C. Grant Willson
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Paper Abstract

Acid diffusion during the post-exposure bake of chemically amplified resists (CARs) is a major contributing factor to line width roughness (LWR) and resolution limits at the 32 nm node and beyond. To overcome these limitations, non-CAR materials are becoming more attractive because acid diffusion is eliminated. We have therefore focused our effort on the synthesis of copolymers that have both a diacyldiazo side chain unit as well as a hexafluoroalcohol unit. This copolymer shows better contrast than that of copolymers containing lactone units due to their inhibition behavior. Furthermore, polymer blends containing hexafluoroalcohol groups show good 100 nm line and space patterning property for 193 nm lithography. This paper describes the design, synthesis, and characterization of these non-CARs, and thier improvement to photolithography.

Paper Details

Date Published: 26 March 2008
PDF: 8 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231C (26 March 2008); doi: 10.1117/12.772646
Show Author Affiliations
Isao Nishimura, Univ. of Texas at Austin (United States)
William H. Heath, Univ. of Texas at Austin (United States)
Kazuya Matsumoto, Univ. of Texas at Austin (United States)
Wei-Lun Jen, Univ. of Texas at Austin (United States)
Saul S. Lee, Univ. of Texas at Austin (United States)
Colin Neikirk, Univ. of Texas at Austin (United States)
Tsutomu Shimokawa, JSR Corp. (Japan)
Koji Ito, JSR Corp. (Japan)
Koichi Fujiwara, JSR Micro Inc. (United States)
C. Grant Willson, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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