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Proceedings Paper

Characterization of the poly gate ACI structure with laser based angle resolved multiple wavelength scatterometry
Author(s): Gary Jiang; Michael Kotelyanskii; Fei Shen
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Paper Abstract

Optical metrology techniques are essential for process control of gate formation process steps from lithography to the dielectric, spacers, gate and straining layer deposition in sub-90nm technology nodes. Traditionally, optical metrology is based on the measurement of periodic lines or hole arrays using a spectroscopic ellipsometer or reflectometer, collecting data across a wide wavelength spectrum at a single angle of incidence. In this paper, we present results of measurements on periodic Poly-Si gate line arrays using laser based Focused Beam Scatterometry (FBS), illuminating at 3 discrete laser wavelengths while data is collected over an angle of incidence range from 45° to 65°. Accuracy, repeatability, and tool-to-tool matching results for the poly-Si gate line arrays are discussed. Comparison with the CD-SEM and cross-section TEM result for measurement/modeling accuracy is also presented.

Paper Details

Date Published: 25 March 2008
PDF: 6 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223Q (25 March 2008); doi: 10.1117/12.772615
Show Author Affiliations
Gary Jiang, Rudolph Technologies, Inc. (United States)
Michael Kotelyanskii, Rudolph Technologies, Inc. (United States)
Fei Shen, Rudolph Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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