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Proceedings Paper

Consideration of VT5 etch-based OPC modeling
Author(s): ChinTeong Lim; Vlad Temchenko; Dieter Kaiser; Ingo Meusel; Sebastian Schmidt; Jens Schneider; Martin Niehoff
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Paper Abstract

Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this functionality nowadays; yet few were implemented in manufacturing due to various risks considerations such as compromises in resist and optical effects prediction, etch model accuracy or even runtime concern. Conventional method of applying rule-based alongside resist model is popular but requires a lot of lengthy code generation to provide a leaner OPC input. This work discusses risk factors and their considerations, together with introduction of techniques used within Mentor Calibre VT5 etch-based modeling at sub 90nm technology node. Various strategies are discussed with the aim of better handling of large etch bias offset without adding complexity into final OPC package. Finally, results were presented to assess the advantages and limitations of the final method chosen.

Paper Details

Date Published: 7 March 2008
PDF: 12 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69243D (7 March 2008); doi: 10.1117/12.772585
Show Author Affiliations
ChinTeong Lim, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Vlad Temchenko, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Dieter Kaiser, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Ingo Meusel, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Sebastian Schmidt, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Jens Schneider, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Martin Niehoff, Mentor Graphics Corp. (Germany)


Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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