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Proceedings Paper

Coupled-dipole modelling for 3D mask simulation
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Paper Abstract

The growing importance of mask simulation in a low-k1 realm is matched by an increasing need for numerical methods capable of handling complex 3D configurations. Various approximations applied to physical parameters or boundary conditions allowed a few methods to achieve reasonable run-times. In this work the theoretical foundation and simulation results of an alternative 3D mask modeling method suitable for OPC simulations are presented. We have established the throughput and accuracy of the Coupled-Dipole Simulation Method and have compared results to the rigorous FDTD approach using a test pattern. We will discuss in detail possible approximations needed in order to accelerate the method's performance.

Paper Details

Date Published: 1 April 2008
PDF: 11 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69240W (1 April 2008); doi: 10.1117/12.772572
Show Author Affiliations
Vlad Temchenko, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Chinteong Lim, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Dave Wallis, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Jens Schneider, Infineon Technologies Dresden GmbH and Co. OHG (Germany)
Martin Niehoff, Mentor Graphics Corp. (Germany)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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