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Evaluation of inverse lithography technology for 55nm-node memory device
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Paper Abstract

Model based OPC has been generally used to correct proximity effects down to ~50 nm critical dimensions at k1 values around 0.3. As design rules shrink and k1 drops below 0.3, however; it is very hard to obtain enough process window and acceptable MEEF (Mask Error Enhancement Factor) with conventional model based OPC. Recently, ILT (Inverse Lithography Technology) has been introduced and has demonstrated wider process windows than conventional OPC. The ILT developed by Luminescent uses level-set methods to find the optimal photo mask layout, which maximizes the process window subject to mask manufacturing constraints. We have evaluated performance of ILT for critical dimensions of 55nm, printed under conditions corresponding to k1 ~ 0.28. Results indicated a larger process window and better pattern fidelity than obtained with other methods. In this paper, we present the optimization procedures, model calibration and evaluation results for 55 nm metal and contact layers and discuss the possibilities and the limitations of this new technology.

Paper Details

Date Published: 7 March 2008
PDF: 7 pages
Proc. SPIE 6924, Optical Microlithography XXI, 692438 (7 March 2008); doi: 10.1117/12.772515
Show Author Affiliations
Byung-ug Cho, Hynix Semiconductor, Inc. (South Korea)
Sung-woo Ko, Hynix Semiconductor, Inc. (South Korea)
Jae-seung Choi, Hynix Semiconductor, Inc. (South Korea)
Cheol-Kyun Kim, Hynix Semiconductor, Inc. (South Korea)
Hyun-jo Yang, Hynix Semiconductor, Inc. (South Korea)
DongGyu Yim, Hynix Semiconductor, Inc. (South Korea)
David Kim, Luminescent Technology (United States)
Bob Gleason, Luminescent Technology (United States)
KiHo Baik, Luminescent Technology (United States)
Ying Cui, Luminescent Technology (United States)
Thuc Dam, Luminescent Technology (United States)
Linyong Pang, Luminescent Technology (United States)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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