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Proceedings Paper

The study of defect control and patterning performance for top coating free resist process
Author(s): Myoung-Soo Kim; Hun-Rok Jung; Hae-Wook Ryu; Hong-Goo Lee; Sung-Mok Hong; Hak-Joon Kim; Sung-Nam Park; Myung-Goon Gil; Hyo-Sang Kang
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Paper Abstract

In this study, the top coating (TC) resist and new top coating free (TCF) resist at the condition of immersion patterning process have been evaluated and compared in the respect of leaching rate, process margins and immersion related defects. The 55nm of dense L/S patterns are defined by using immersion process. The leaching rates of TCF resist are investigated for the different conditions of baking temperatures and leaching times. Their measurements have been done for the cation and anion dissociated from PAG under the conditions of unexposed and exposed areas. The cation leaching rate of new TCF resist is 1.4 × E-13 mol/cm2.sec at the unexposed area. It is lower than the spec suggested by ASML. From the leaching data, it is confirmed that the TCF resist can apply for the patterning without top coating material. The process margins of TCF resist are slightly wider than those of TC resist in the respect of depth of focus and energy latitude. And the top loss of TC resist and TCF resist are 20nm and 8nm, respectively after development process. The immersion related defects are also investigated for these resists. The defect map of TCF resist shows much fewer defects than those of TC resist. The immersion related defect of TCF resist is not founded among the patterns and the number of micro-bridge defect is fewer than 5. The defect level of TCF resist is more stabilized by optimizations of chemical structure of resist and process. From the experimental results, it is confirmed that the TCF resist is available to apply for device production of sub-55nm technology. Especially, the application of TCF resist can reduce the process step of top coating and also make the improvement of through-put with cost of ownership in process. Therefore, the TCF resist should be progressively studied and applied for device production in the respect of improvement of device property and process simplification.

Paper Details

Date Published: 26 March 2008
PDF: 7 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231T (26 March 2008); doi: 10.1117/12.772471
Show Author Affiliations
Myoung-Soo Kim, Hynix Semiconductor Inc. (South Korea)
Hun-Rok Jung, Hynix Semiconductor Inc. (South Korea)
Hae-Wook Ryu, Hynix Semiconductor Inc. (South Korea)
Hong-Goo Lee, Hynix Semiconductor Inc. (South Korea)
Sung-Mok Hong, Hynix Semiconductor Inc. (South Korea)
Hak-Joon Kim, Hynix Semiconductor Inc. (South Korea)
Sung-Nam Park, Hynix Semiconductor Inc. (South Korea)
Myung-Goon Gil, Hynix Semiconductor Inc. (South Korea)
Hyo-Sang Kang, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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