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Proceedings Paper

The rapid introduction of immersion lithography for NAND flash: challenges and experience
Author(s): Chan-Tsun Wu; Hung Ming Lin; Wei-Ming Wu; Meng-Hsun Chan; Benjamin Szu-Min Lin; Kuan-Heng Lin; Andrew J. Hazelton; Toshio Ohhashi; Katsushi Nakano; Yasuhiro Iriuchijima; Chunhsin Lee; Long Hung
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Paper Abstract

Immersion technology is definitely the mainstream lithography technology for NAND FLASH in recent years since hyper-NA immersion technology drives the resolution limit down to the 40-50 nm half pitch region. Immersion defectivity and overlay issues are key challenges before introducing immersion technology into mass production. In this work, both long term immersion defectivity and overlay data, as well as good photoresist performance, show the Nikon S610C immersion scanner plus LITHIUS i+ cluster is capable of 40-50 nm NAND FLASH mass production. Immersion defects are classified based on their causes, and no tool specific immersion defects, e.g. bubbles and water marks, were found in the Nikon S610C plus TEL LITHIUS i+ cluster. Materials-induced immersion defects require more attention to achieve production-worthy results.

Paper Details

Date Published: 11 April 2008
PDF: 10 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69241A (11 April 2008); doi: 10.1117/12.772448
Show Author Affiliations
Chan-Tsun Wu, Powerchip Semiconductor Corp. (Taiwan)
Hung Ming Lin, Powerchip Semiconductor Corp. (Taiwan)
Wei-Ming Wu, Powerchip Semiconductor Corp. (Taiwan)
Meng-Hsun Chan, Powerchip Semiconductor Corp. (Taiwan)
Benjamin Szu-Min Lin, Powerchip Semiconductor Corp. (Taiwan)
Kuan-Heng Lin, Powerchip Semiconductor Corp. (Taiwan)
Andrew J. Hazelton, Nikon Corp. (Japan)
Toshio Ohhashi, Nikon Corp. (Japan)
Katsushi Nakano, Nikon Corp. (Japan)
Yasuhiro Iriuchijima, Nikon Corp. (Japan)
Chunhsin Lee, Nikon Corp. (Japan)
Long Hung, Nikon Precision Taiwan, Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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