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Proceedings Paper

Nikon EUVL development progress update
Author(s): Takaharu Miura; Katsuhiko Murakami; Kazuaki Suzuki; Yoshiaki Kohama; Kenji Morita; Kazunari Hada; Yukiharu Ohkubo; Hidemi Kawai
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Paper Abstract

Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors. In this paper we would like to present our significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible, such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. Nikon has developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. The proto-type development of full-field projection optics has been successfully completed and its technical achievement has reflected into production optics. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation. Nikon has already developed dual pod reticle carrier for EUV1 tool. In parallel Nikon has been developing the same concept carrier for HVM in cooperation with Canon and Entegris. Regarding to EUV1 tool development, all modules of EUV1 such as full-field projection optics module, illumination optics module, vacuum body module, vacuum compatible reticle/wafer stage modules, reticle/wafer loader modules, EUV light source module have been completed. Nikon has already started EUV1 module installation process and the module level function and basic performance have been being checked. Nikon will complete module integration to achieve the first exposure result. Some development results will be shown which lead to confidence for realization of EUVL. Nikon also would like to announce that development of 1st generation production EUVL tool named EUV2 has been studied.

Paper Details

Date Published: 26 March 2008
PDF: 10 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210M (26 March 2008); doi: 10.1117/12.772444
Show Author Affiliations
Takaharu Miura, Nikon Corp. (Japan)
Katsuhiko Murakami, Nikon Corp. (Japan)
Kazuaki Suzuki, Nikon Corp. (Japan)
Yoshiaki Kohama, Nikon Corp. (Japan)
Kenji Morita, Nikon Corp. (Japan)
Kazunari Hada, Nikon Corp. (Japan)
Yukiharu Ohkubo, Nikon Corp. (Japan)
Hidemi Kawai, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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