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Proceedings Paper

Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials
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Paper Abstract

Lifetime of EUVL masks which are intentionally contaminated with carbon is investigated by comparing Si and Ru capping layer. Carbon deposition is observed not only on the multilayer, but also on the absorber sidewall of the mask. Deposited carbon on the sidewall during EUV exposure gradually varies mask CD and also induces the changes in the wafer printability and dose in the scanner. In addition, we compare the effects of carbon contamination between Si and Ru capped blank. Ru capped blank shows longer mask mean time between cleaning (MTBC) than Si capped blank by 25% in our experiments.

Paper Details

Date Published: 27 March 2008
PDF: 9 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692115 (27 March 2008); doi: 10.1117/12.772412
Show Author Affiliations
Sungmin Huh, Samsung Electronics Co., Ltd. (South Korea)
Hoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Gisung Yoon, Samsung Electronics Co., Ltd. (South Korea)
Jaehyuck Choi, Samsung Electronics Co., Ltd. (South Korea)
Han-Shin Lee, Samsung Electronics Co., Ltd. (South Korea)
Dong Gun Lee, Samsung Electronics Co., Ltd. (South Korea)
Byungsup Ahn, Samsung Electronics Co., Ltd. (South Korea)
Hwan-Seok Seo, Samsung Electronics Co., Ltd. (South Korea)
Dongwan Kim, Samsung Electronics Co., Ltd. (South Korea)
Seoung Sue Kim, Samsung Electronics Co., Ltd. (South Korea)
Han Ku Cho, Samsung Electronics Co., Ltd. (South Korea)
Takeo Watanabe, Univ. of Hyogo (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)


Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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