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Proceedings Paper

Film stacking architecture for immersion lithography process
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Paper Abstract

In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, the architecture will restrict lithographic area within a wafer due to top side EBR accuracy In this paper, we report an effective film stacking architecture that also allows maximum lithographic area. This study used a new bevel rinse system on RF3 for all materials to make suitable film stacking on the top side bevel. This evaluation showed that the new bevel rinse system allows the maximum lithographic area and a clean wafer edge. Patterning defects were improved with suitable film stacking.

Paper Details

Date Published: 24 March 2008
PDF: 9 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69222X (24 March 2008); doi: 10.1117/12.772411
Show Author Affiliations
Tomohiro Goto, SOKUDO Co., Ltd. (Japan)
Masakazu Sanada, SOKUDO Co., Ltd. (Japan)
Tadashi Miyagi, SOKUDO Co., Ltd. (Japan)
Kazuhito Shigemori, SOKUDO Co., Ltd. (Japan)
Masashi Kanaoka, SOKUDO Co., Ltd. (Japan)
Shuichi Yasuda, SOKUDO Co., Ltd. (Japan)
Osamu Tamada, SOKUDO Co., Ltd. (Japan)
Masaya Asai, SOKUDO Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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