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Proceedings Paper

Stress measurement system for process control
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Paper Abstract

Recently, stressed silicon wafers have begun being used and it is necessary to measure the strain in the surface film for process control. We developed a stress measurement system with a built in film thickness measurement tool. In pursuing this development we concentrated on the high-throughput and stable results required for semiconductor process control tools. We achieved the desired results by using a collimator in the microscope. Our system can measure the stress in 1 dimension line on a 300 mm wafer in less than 30 seconds. Then we proceed to measure wafer patterns with the same system. We describe this system and the measurement data it provides.

Paper Details

Date Published: 27 March 2008
PDF: 5 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692231 (27 March 2008); doi: 10.1117/12.772399
Show Author Affiliations
Kumiko Akashika, Dainippon Screen Manufacturing Co., Ltd. (Japan)
Masahiro Horie, Dainippon Screen Manufacturing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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