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Proceedings Paper

Post develop stain defect reduction
Author(s): Masahiko Harumoto; Takuya Kuroda; Minoru Sugiyama; Akihiro Hisai
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Paper Abstract

This study reports on stain defect reduction on KrF, ArF and Immersion resist system. Stain defects that appear after develop are a common problem with i-line, KrF, ArF and ArF-immersion resists. Last year we reported a reduction of this type of defect by optimizing the developer process. However, that optimized process used a long rinse time, and this negatively impacts throughput. In this work, we designed a novel develop process that reduced stain defects on the resist. Previous work showed that stain defect formation was mainly governed by the develop process conditions. Hence, in this work we focused on develop system improvements. On this system we identified the process both significantly reduced stain defect count and used a shorter develop process time. In addition to reducing defect count, we identified the mechanism of reduction of the stain defect. This was done by analyzing the composition of the defect.

Paper Details

Date Published: 26 March 2008
PDF: 10 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69233J (26 March 2008); doi: 10.1117/12.772367
Show Author Affiliations
Masahiko Harumoto, SOKUDO Co., Ltd. (Japan)
Takuya Kuroda, SOKUDO Co., Ltd. (Japan)
Minoru Sugiyama, SOKUDO Co., Ltd. (Japan)
Akihiro Hisai, SOKUDO Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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