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Proceedings Paper

Surface roughness of molecular resist for EUV lithography
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Paper Abstract

Surface roughness of molecular and polymer resists were probed with an atomic force microscope (AFM) and analyzed using the power spectrum density (PSD) function. The PSD curve obtained from AFM image of the molecular resist showed a broad profile dependent on the exposure dose and small roughness. The PSD increased more in the low spatial frequency range after the exposure and the correlation length was increased. Meanwhile, the PSD of the polymer resist showed a narrow profile with respect to the dose and large roughness. Overall increase in PSD with respect to the spatial frequency was observed after the exposure.

Paper Details

Date Published: 26 March 2008
PDF: 8 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230L (26 March 2008); doi: 10.1117/12.772349
Show Author Affiliations
Minoru Toriumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Lab. for Interdisciplinary Science and Technology (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shinji Kobayashi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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