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Modeling for metrology with a helium beam
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Paper Abstract

IONiSE is a Monte Carlo simulation which describes the interactions of 5-50 keV energy He+ ions with solids, and predicts the production of ion induced secondary electron (iSE) emission. Its use to determine the most probable implant depth, the maximum ion range, and the effect of straggle are presented. IONiSE has been used to numerically fit literature tabulations of iSE generation from five elements so as to derive excitation energy and mean free path parameters. By employing those parameters in IONiSE the topographic yield variation for iSE as a function of energy and the atomic number of the target has been predicted, and estimates of the individual secondary electron contributions from the incident and backscattered ions have been made. These simulations help to create a foundation for the application and the interpretation of iSE images for metrology.

Paper Details

Date Published: 24 March 2008
PDF: 8 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221W (24 March 2008); doi: 10.1117/12.772300
Show Author Affiliations
Ranjan Ramachandra, Univ. of Tennessee (United States)
Brendan J. Griffin, Univ. of Western Australia (Australia)
Oak Ridge National Lab. (United States)
David C. Joy, Univ. of Tennessee (United States)
Oak Ridge National Lab. (United States)

Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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