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Proceedings Paper

Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography
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Paper Abstract

It is well-known that line edge roughness (LER) of patterned features in chemically amplified (CA) resists is formed in the acid generation stage and expected to be moderated by the acid diffusion and development process. To provide an insight into the limit of LER is essential for the realization of next-generation lithographies such as electron beam or extreme ultraviolet. Based on the results of Monte Carlo simulation which reproduces dynamics of chemical intermediates in positive-tone CA resist, we discuss the possibility of low LER (high frequency) after development. It is found that low LER is achievable; however, the process condition is still strict.

Paper Details

Date Published: 26 March 2008
PDF: 6 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230S (26 March 2008); doi: 10.1117/12.772174
Show Author Affiliations
Akinori Saeki, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
Heidi B. Cao, Intel Corp. (United States)
Hai Deng, Intel Corp. (United States)
Michael J. Leeson, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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