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Proceedings Paper

Recent progress of GaN electronic devices for wireless communication system
Author(s): T. Kikkawa; K. Imanishi; N. Hara; H. Shigematsu; K. Joshin
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Paper Abstract

We report a current status of high-power GaN HEMTs for high-power and high-efficiency amplifiers with higher efficiency by 5% especially at a backed-off region than the conventional GaN HEMTs. First, we introduce our specific device structure GaN HEMT with dispersion-free I-V characteristics, low Idsq-drift and high reliability. Record average drain efficiency of over 50% and linear gain of 17.2 dB were obtained at an output power of 45 dBm and 2.5 GHz. Next, we discuss their reliability with high-temperature life tests resulting in their estimated life of over 1 x 106 hours at Tj of 200 °C. High-k insulated gate HEMTs using Ta2O5 were also developed. Finally, we describe the next generation GaN HEMTs for millimeter-wave applications.

Paper Details

Date Published: 28 February 2008
PDF: 12 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941Q (28 February 2008); doi: 10.1117/12.772152
Show Author Affiliations
T. Kikkawa, Fujitsu Ltd./Fujitsu Labs. Ltd. (Japan)
K. Imanishi, Fujitsu Ltd./Fujitsu Labs. Ltd. (Japan)
N. Hara, Fujitsu Ltd./Fujitsu Labs. Ltd. (Japan)
H. Shigematsu, Fujitsu Ltd./Fujitsu Labs. Ltd. (Japan)
K. Joshin, Fujitsu Ltd./Fujitsu Labs. Ltd. (Japan)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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