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CD bias reduction in CD-SEM linewidth measurements for advanced lithographyFormat | Member Price | Non-Member Price |
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Paper Abstract
The linewidth measurement capability of the model-based library (MBL) matching technique was evaluated
experimentally. This technique estimates the dimensions and shape of a target pattern by comparing a measured SEM
image profile to a library of simulated line scans. The simulation model uses a non-linear least squares method to
estimate pattern geometry parameters. To examine the application of MBL matching in an advanced lithography process,
a focus-exposure matrix wafer was prepared with a leading-edge immersion lithography tool. The evaluation used 36
sites with target structures having various linewidths from 45 to 200 nm. The measurement accuracy was evaluated by
using an atomic force microscope (AFM) as a reference measurement system. The results of a first trial indicated that
two or more solutions could exist in the parameter space in MBL matching. To solve this problem, we obtained a rough
estimation of the scale parameter in SEM imaging, based on experimental results, in order to add a constraint in the
matching process. As a result, the sensitivity to sidewall variation in MBL matching was improved, and the measurement
bias was reduced from 22.1 to 16 nm. These results indicate the possibility of improving the CD measurement capability
by applying this tool parameter appropriately.
Paper Details
Date Published: 24 March 2008
PDF: 11 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221T (24 March 2008); doi: 10.1117/12.772088
Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)
PDF: 11 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221T (24 March 2008); doi: 10.1117/12.772088
Show Author Affiliations
Maki Tanaka, Hitachi, Ltd. (Japan)
Jeroen Meessen, ASML (Netherlands)
Chie Shishido, Hitachi, Ltd. (Japan)
Jeroen Meessen, ASML (Netherlands)
Chie Shishido, Hitachi, Ltd. (Japan)
Kenji Watanabe, Hitachi High-Technologies Corp. (Japan)
Ingrid Minnaert-Janssen, ASML (Netherlands)
Peter Vanoppen, ASML (Netherlands)
Ingrid Minnaert-Janssen, ASML (Netherlands)
Peter Vanoppen, ASML (Netherlands)
Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)
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