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Proceedings Paper

Diblock copolymer directed self-assembly for CMOS device fabrication
Author(s): Li-Wen Chang; Marissa A. Caldwell; H.-S. Philip Wong
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Paper Abstract

We present our work on using one level of templated self-assembly using 70:30::PS-b-PMMA. Focus is on the fabrication of top-gated silicon MOSFETs and simple circuits. The potential choice as a first demonstration is to use 70:30::PS-b-PMMA to define the contact holes of MOSFETs. Contact holes make a good starting point because of both their size and repetition in view of today's design. We have presented our work of solving half-hole problem when adopting templated selfassembly. Results of transferring the self-assembled holes from the polymer mask to a silicon dioxide layer by plasma etching and filling the etched holes in silicon dioxide with aspect ratio of approximately one to three are presented. Potential integration issues for making MOSFETs will also be addressed.

Paper Details

Date Published: 20 March 2008
PDF: 6 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69212M (20 March 2008); doi: 10.1117/12.772000
Show Author Affiliations
Li-Wen Chang, Stanford Univ. (United States)
Marissa A. Caldwell, Stanford Univ. (United States)
H.-S. Philip Wong, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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