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Proceedings Paper

Imaging performance of the EUV alpha semo tool at IMEC
Author(s): G. F. Lorusso; J. Hermans; A. M. Goethals; B. Baudemprez; F. Van Roey; A. M. Myers; I. Kim; B. S. Kim; R. M. Jonckheere; A. Niroomand; S. Lok; A. Van Dijk; J.-F. de Marneffe; S. Demuynck; D. Goossens; K. Ronse
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Paper Abstract

Extreme Ultraviolet Lithography (EUVL) is the leading candidate beyond 32nm half-pitch device manufacturing. Having completed the installation of the ASML EUV full-field scanner, IMEC has a fully-integrated 300mm EUVL process line. Our current focus is on satisfying the specifications to produce real devices in our facilities. This paper reports on the imaging fingerprint of the EUV Alpha Demo Tool (ADT), detailing resolution, imaging, and overlay performance. Particular emphasis is given to small pitch contact holes, which are a critical layer for advanced manufacturing nodes and one of the most likely layers where EUVL may take over from 193nm lithography. Imaging of contact holes, pattern transfer and successful printing of the contact hole level on a 32nm SRAM device is demonstrated. The impact of flare and shadowing on EUV ADT performance is characterized experimentally, enabling the implementation of appropriate mitigation strategies.

Paper Details

Date Published: 20 March 2008
PDF: 10 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210O (20 March 2008); doi: 10.1117/12.771983
Show Author Affiliations
G. F. Lorusso, IMEC (Belgium)
J. Hermans, IMEC (Belgium)
A. M. Goethals, IMEC (Belgium)
B. Baudemprez, IMEC (Belgium)
F. Van Roey, IMEC (Belgium)
A. M. Myers, Intel Corp. (United States)
I. Kim, SAMSUNG Electronics Co., Ltd. (South Korea)
B. S. Kim, SAMSUNG Electronics Co., Ltd. (South Korea)
R. M. Jonckheere, IMEC (Belgium)
A. Niroomand, Micron Technology, Inc. (Belgium)
S. Lok, ASML (Netherlands)
A. Van Dijk, ASML (Netherlands)
J.-F. de Marneffe, IMEC (Belgium)
S. Demuynck, IMEC (Belgium)
D. Goossens, IMEC (Belgium)
K. Ronse, IMEC (Belgium)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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