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Proceedings Paper

Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning
Author(s): Yasushi Nishiyama; Toshihisa Anazawa; Hiroaki Oizumi; Iwao Nishiyama; Osamu Suga; Kazuki Abe; Satoru Kagata; Akira Izumi
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Paper Abstract

The deposition characteristics of carbon film on EUV mask surface, the impact of carbon deposition on lithography performance, and cleaning of deposited carbon film on EUV mask are studied. The density of the carbon film was found to be nearly half of that of graphite by X-ray reflectivity measurement. The impact of carbon deposition on the lithography performance was simulated by SOLID-EUV. The CD variation by carbon deposition on the mask depends on the deposition profile on the absorber pattern. Intentionally created contaminated masks were treated by a cleaning process using atomic hydrogen. The cleaning efficiency and durability of film materials are discussed.

Paper Details

Date Published: 20 March 2008
PDF: 10 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692116 (20 March 2008); doi: 10.1117/12.771978
Show Author Affiliations
Yasushi Nishiyama, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihisa Anazawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Oizumi, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Iwao Nishiyama, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuki Abe, Kyushu Institute of Technology (Japan)
Satoru Kagata, Kyushu Institute of Technology (Japan)
Akira Izumi, Kyushu Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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