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Proceedings Paper

Evaluation result of Selete's exposure tool: impact of the source performance
Author(s): Kazuo Tawarayama; Shunko Magoshi; Hajime Aoyama; Yuusuke Tanaka; Seiichiro Shirai; Hiroyuki Tanaka
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Paper Abstract

We have installed a small-field exposure tool (SFET) manufactured by Canon and EUVA with a discharge-producedplasma EUV source that employs Xenon gas. We investigated how the performance of the source affects lithographic performance. Electrode life has relation to the illumination uniformity of the exposure field on wafer surface. Also source power at the wafer surface has relation to the electrode life. Electrode life makes EUV power decreasing and larger illumination uniformity number. We examine the pupilgram test using high sensitivity resist. Actual pupil fill shape was observed and there was non-uniform distribution. Pupil fill shape was changed after exchanging electrode, also resist CD bias between parallel and horizontal line of the field. That was comparable to the simulation result. The source electrode requires periodic replacement, which impacts not only the performance of the source, but also the lithographic performance of the tool, such as the CD of resist patterns.

Paper Details

Date Published: 21 March 2008
PDF: 8 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69212V (21 March 2008); doi: 10.1117/12.771891
Show Author Affiliations
Kazuo Tawarayama, Mirai-Semiconductor Leading Edge Technologies, Inc. (Japan)
Shunko Magoshi, Mirai-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, Mirai-Semiconductor Leading Edge Technologies, Inc. (Japan)
Yuusuke Tanaka, Mirai-Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichiro Shirai, Mirai-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Tanaka, Mirai-Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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