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Proceedings Paper

EUV resist development in Selete
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Paper Abstract

The main development issue regarding EUV resist has been how to concurrently achieve high sensitivity, high resolution, and low line width roughness (LWR). This paper describes the current status of EUV resist development at Selete with a small field exposure tool (SFET). Selete standard resist 2 (SSR2) can simultaneously resolve 26-nm dense and isolated lines with the SFET. Our top data for resolution with annular illumination shows a 25-nm half-pitch. In evaluating resist performance, resist blur should be estimated separately from exposure tool fluctuations. By considering the aberration, flare, and actual illumination shape, resist blur can be estimated more accurately. We estimate the resist blur for SSR2 to be between 9.5 and 10.4 nm as sigma of the Gaussian convolution. We also present benchmarking results for suppliers' samples. Though sensitivity has been improved somewhat in some resists, further improvement is necessary. Further reduction of LWR is especially needed.

Paper Details

Date Published: 4 April 2008
PDF: 10 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692313 (4 April 2008); doi: 10.1117/12.771858
Show Author Affiliations
Daisuke Kawamura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shinji Kobayashi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julius Joseph S. Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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