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Proceedings Paper

LPP EUV light source employing high power C02 laser
Author(s): Hideo Hoshino; Takashi Suganuma; Takeshi Asayama; Krzysztof Nowak; Masato Moriya; Tamotsu Abe; Akira Endo; Akira Sumitani
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Paper Abstract

We are developing a high power CO2 laser system for a LPP EUV light source. Recent theoretical and experimental data demonstrate the advantages of the combination of a CO2 laser with a Sn target including the generation of a high CE and low debris plasma with low energy ions and low out-of-band radiation. Our laser system is a short pulse CO2 MOPA (Master Oscillator Power Amplifier) system with 22 ns pulse width and multi kW average power at 100 kHz repetition rate. We achieved an average laser power of 8 kW with a single laser beam having very good beam quality. A EUV in-band power of 60 W at the intermediate focus was generated irradiating a rotating tin plate with 6 kW laser power.

Paper Details

Date Published: 21 March 2008
PDF: 8 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692131 (21 March 2008); doi: 10.1117/12.771847
Show Author Affiliations
Hideo Hoshino, Extreme Ultraviolet Lithography System Development Association (Japan)
Takashi Suganuma, Extreme Ultraviolet Lithography System Development Association (Japan)
Takeshi Asayama, Extreme Ultraviolet Lithography System Development Association (Japan)
Krzysztof Nowak, Extreme Ultraviolet Lithography System Development Association (Japan)
Masato Moriya, Extreme Ultraviolet Lithography System Development Association (Japan)
Tamotsu Abe, Extreme Ultraviolet Lithography System Development Association (Japan)
Akira Endo, Extreme Ultraviolet Lithography System Development Association (Japan)
Akira Sumitani, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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