Share Email Print
cover

Proceedings Paper

Chemically amplified molecular resist based on fullerene derivative for nanolithography
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We developed a chemically amplified molecular resist based on a fullerene derivative and evaluated the lithographic performance using 75 keV electron beam (EB) exposure tool to explore the potential of fullerene derivatives as a positive-type EB resist with high resolution and high sensitivity properties. The etching rate of fullerene derivative is almost similar to that of ZEP and UVIII. Also, the fullerene derivative resist containing 6 wt% acid generator shows a sensitivity of 33 &mgr;C/cm2 when it was exposed to 75 keV electron beam and postbaked at 170 °C. Although it required a dose of 800 &mgr;C/cm2, a fullerene derivative film yielded line resolution of better than 30 nm. Moreover, the effect of the types of acid generators to the resist performance of fullerene derivatives was investigated. It is very important for a fullerene derivative resist to select appropriate acid generator and process conditions. Fullerene derivative resists are a promising candidate for nanolithography.

Paper Details

Date Published: 26 March 2008
PDF: 8 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230N (26 March 2008); doi: 10.1117/12.771835
Show Author Affiliations
Hiroki Yamamoto, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
Tomoyuki Ando, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Mitsuru Sato, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Junichi Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top