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Proceedings Paper

Sn droplet target development for laser produced plasma EUV light source
Author(s): Masaki Nakano; Takayuki Yabu; Hiroshi Someya; Tamotsu Abe; Georg Soumagne; Akira Endo; Akira Sumitani
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Paper Abstract

We are developing a Sn droplet generator for a LPP HVM EUV light source. Droplet trains with frequencies up to 500kHz and droplet diameters below 20um are generated via the continuous jet method. Charging single droplets and using deflector electrodes these charged droplets are selected from the droplet train and irradiated by the drive laser. Due to the small droplet diameter, the drive laser otherwise irradiates several droplets inside the droplet train thus increasing the Sn debris as is experimentally shown. In addition, the paper outlines that a 30um droplet size is the mass limit for up to 180W EUV generation based on the assumption that each Sn atom emits on average a single in-band photon.

Paper Details

Date Published: 21 March 2008
PDF: 8 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692130 (21 March 2008); doi: 10.1117/12.771820
Show Author Affiliations
Masaki Nakano, Extreme Ultraviolet Lithography System Development Association (Japan)
Takayuki Yabu, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiroshi Someya, Extreme Ultraviolet Lithography System Development Association (Japan)
Tamotsu Abe, Extreme Ultraviolet Lithography System Development Association (Japan)
Georg Soumagne, Extreme Ultraviolet Lithography System Development Association (Japan)
Akira Endo, Extreme Ultraviolet Lithography System Development Association (Japan)
Akira Sumitani, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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