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Proceedings Paper

Protection from surface oxidation of Ru capping layers for EUVL projection optics mirrors by introducing hydrocarbon gas
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Paper Abstract

We investigated the protection of a Ru-capped Mo/Si multilayer from surface oxidation under exposure to EUV radiation in the presence of water vapor and isopropyl alcohol (IPA). Degradation of the reflectance of the Ru-capped Mo/Si multilayer by EUV irradiation was controlled by introducing IPA gas. We also investigated the reduction effect of the oxide layer in a multilayer mirror by introducing ethanol and exposed EUV. The Ru-capped multilayer sample was exposed to EUV radiation in the presence of only water vapor to oxidize its surface. The reflectance decreased by about 1.5%. Then the sample was exposed to EUV radiation in the presence of only ethanol vapor. The reflectivity of the sample was recovered to +0.5%, and the atomic concentration of oxygen in the irradiated area was decreased by EUV irradiation in the presence of ethanol.

Paper Details

Date Published: 21 March 2008
PDF: 8 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69213C (21 March 2008); doi: 10.1117/12.771814
Show Author Affiliations
Keigo Koida, Univ. of Hyogo (Japan)
Masahito Niibe, Extreme Ultraviolet Lithography System Development Association (Japan)
Yukinobu Kakutani, Univ. of Hyogo (Japan)
Extreme Ultraviolet Lithography System Development Association (Japan)
Shuichi Matsunari, Extreme Ultraviolet Lithography System Development Association (Japan)
Takashi Aoki, Extreme Ultraviolet Lithography System Development Association (Japan)
Shigeru Terashima, Extreme Ultraviolet Lithography System Development Association (Japan)
Takahiro Nakayama, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiromitsu Takase, Extreme Ultraviolet Lithography System Development Association (Japan)
Yasuaki Fukuda, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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