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Proceedings Paper

Process development for high scan speed ArF immersion lithography
Author(s): Nobuji Matsumura; Norihiko Sugie; Kentaro Goto; Koichi Fujiwara; Yoshikazu Yamaguchi; Hirokazu Tanizaki; Katsushi Nakano; Tomoharu Fujiwara; Shinya Wakamizu; Hirofumi Takeguchi; Hiroshi Arima; Hideharu Kyoda; Kosuke Yoshihara; Junichi Kitano
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Paper Abstract

It has been found that 193nm immersion lithography technology can achieve smaller patterns without any modification to the technology infrastructure of existing state-of-the-art 193nm dry lithography. This has made 193nm immersion lithography a promising technology for mass production processes. Recently, scanning speed of the exposure stage has been increasing in order to achieve high throughput for mass production. At present, the adoption of a topcoat is one of the promising candidates for this high speed scanning process. On the other hand, the demand for a non-topcoat process is being pursued from a C.O.O. (cost of ownership) point of view but there are still issues being revealed and concerns to be solved. In this report, feasibility of a comprehensive process for high scanning ArF immersion lithography was discussed. As for the topcoat process, a high receding contact angle topcoat, such as TC-A (JSR), is proving to be a good candidate for mass production using high scanning speed immersion lithography. TC-A has a similar defectivity and lithographic performance to TCX041 (JSR). On the other hand, the feasibility of a non-topcoat process was also investigated. CD uniformity, defectivity and lithography performance of AIM5120JN and AIM5570JN (JSR) data indicate that the non-topcoat process can be adopted for mass production process. An immersion cluster comprised of a high volume production immersion exposure tool, S610C (NIKON) having 1.3 NA and CLEAN TRACKTM LITHIUSTM i+ (TEL) track system were used in this study.

Paper Details

Date Published: 4 April 2008
PDF: 10 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230D (4 April 2008); doi: 10.1117/12.771795
Show Author Affiliations
Nobuji Matsumura, JSR Corp. (Japan)
Norihiko Sugie, JSR Corp. (Japan)
Kentaro Goto, JSR Corp. (Japan)
Koichi Fujiwara, JSR Corp. (Japan)
Yoshikazu Yamaguchi, JSR Corp. (Japan)
Hirokazu Tanizaki, Nikon Corp. (Japan)
Katsushi Nakano, Nikon Corp. (Japan)
Tomoharu Fujiwara, Nikon Corp. (Japan)
Shinya Wakamizu, Tokyo Electron Kyushu Ltd. (Japan)
Hirofumi Takeguchi, Tokyo Electron Kyushu Ltd. (Japan)
Hiroshi Arima, Tokyo Electron Kyushu Ltd. (Japan)
Hideharu Kyoda, Tokyo Electron Kyushu Ltd. (Japan)
Kosuke Yoshihara, Tokyo Electron Kyushu Ltd. (Japan)
Junichi Kitano, Tokyo Electron Kyushu Ltd. (Japan)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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