Share Email Print
cover

Proceedings Paper

EUV resist outgassing analysis in Selete
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

To keep in pace with the highly accelerated speed of development of EUV resists, the use of the pressure rise method in the screening of EUV resist outgassing was utilized. This method was used for its advantage of in-situ applicability and evaluation speed (short evaluation time). Both “outgassing rate” [molecules/cm2/s] and “outgassing amount” [molecules/cm2] unit conventions have been obtained. In the conference, an overview of the latest EUV resist outgassing analysis results using various EUV resists (i.e. chemical amplified, PHS, acrelate, high Ea, low Ea, negative-tone, molecular, etc.) will be discussed in detail.

Paper Details

Date Published: 4 April 2008
PDF: 9 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692342 (4 April 2008); doi: 10.1117/12.771779
Show Author Affiliations
Julius Joseph Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shinji Kobayashi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top