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Proceedings Paper

EUV resist based on low molecular weight PHS
Author(s): Masamitsu Shirai; Akitaka Kurosima; Haruyuki Okamura; Koji Kaneyama; Toshiro Itani
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Paper Abstract

Two types of EUV resists based on poly(4-hyrdoxystyrene) (PHS) were designed, i.e., PHS-bound sensitizer (PHS-FISS) and PHS/sensitizer blend (PHS/FITS). Imino sulfonate compounds were used as a photosensitizer. A PHS-bound sensitizer resist was prepared by the conventional radical copolymerization of 4-(tertbutyldimethylsilyl)oxystyrene (MSOST) and 9-fluorenilideneimino p-styrenesulfonate (FISS) and subsequent de-silylation of the copolymer. PHS with low molecular weight distribution was obtained by the anionic polymerization of MSOST and followed by de-silylation of the polymer. It was found that both types of resist were negative type and highly sensitive ( 10-20 mJ/cm2 ) on exposure at 254 nm and 13.5 nm. In the case of blended resist, the sensitivity was dependent on the amounts of sensitizer added and molecular weight of PHS. Outgassing from the present resists on EUV exposure was lower than that observed for MET-2D resist.

Paper Details

Date Published: 4 April 2008
PDF: 7 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692344 (4 April 2008); doi: 10.1117/12.771774
Show Author Affiliations
Masamitsu Shirai, Osaka Prefecture Univ. (Japan)
Akitaka Kurosima, Osaka Prefecture Univ. (Japan)
Haruyuki Okamura, Osaka Prefecture Univ. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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