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Proceedings Paper

45nm node logic device OPE matching between exposure tools through laser bandwidth tuning
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Paper Abstract

For 45 nm Node logic devices, we have investigated the impact of laser bandwidth fluctuation on Optical Proximity Effect (OPE) by evaluating variation in through-pitch critical dimension (CD) performance. In addition, from these results we have calculated the Iso-Dense Bias (IDB), and determined the sensitivity to laser bandwidth fluctuation. These IDB results also enable us to present the laser bandwidth stability that is required to maintain a constant OPE. And finally, we introduce results from an investigation into OPE-matching between different generations of exposure tools, whereby in addition to laser bandwidth control, tilt-scan methodology was employed.

Paper Details

Date Published: 11 April 2008
PDF: 12 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69242K (11 April 2008); doi: 10.1117/12.771628
Show Author Affiliations
Kazuyuki Yoshimochi, NEC Electronics Corp. (Japan)
Takao Tamura, NEC Electronics Corp. (Japan)
Seiji Nagahara, NEC Electronics Corp. (Japan)
Takayuki Uchiyama, NEC Electronics Corp. (Japan)
Nigel Farrar, Cymer, Inc. (United States)
Toshihiro Oga, Cymer, Inc. (United States)
James Bonafede, Cymer Japan, Inc. (Japan)


Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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