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Proceedings Paper

Low out-gassing organic spin-on hardmask
Author(s): Shinya Minegishi; Nakaatsu Yoshimura; Mitsuo Sato; Yousuke Konno; Keiji Konno; Mark Slezak; Junichi Takahashi; Shigeru Abe; Yoshikazu Yamaguchi; Tsutomu Shimokawa
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Paper Abstract

Beyond 45nm node processes, ArF hyper-NA immersion lithography systems are an inevitable choice for obtaining smaller patterns. A hyper-NA, dual BARC system is proposed to achieve low reflectivity. However, the ability for the resist to ask as a mask is severely challenged because of the increased film thickness associated with a dual BARC system. In order to obtain enough etch selectivity to the substrate, multi-layer resist processes can be applied. General multi-layer resist processes uses silicon containing an inorganic spin-on hard mask and an organic spin-on hard mask with a high carbon content. One of the problems of organic spin-on hard masks is high out-gassing, which can cause defect issues in mass production. We have developed a new organic hard mask with low out-gassing, good reflectivity control (< 0.2%) and good etch durability. Gap-filling performance also can be controlled by changing its fluidity and wettability on the substrate.

Paper Details

Date Published: 26 March 2008
PDF: 9 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232X (26 March 2008); doi: 10.1117/12.771621
Show Author Affiliations
Shinya Minegishi, JSR Corp. (Japan)
Nakaatsu Yoshimura, JSR Corp. (Japan)
Mitsuo Sato, JSR Corp. (Japan)
Yousuke Konno, JSR Corp. (Japan)
Keiji Konno, JSR Corp. (Japan)
Mark Slezak, JSR Micro (United States)
Junichi Takahashi, JSR Corp. (Japan)
Shigeru Abe, JSR Corp. (Japan)
Yoshikazu Yamaguchi, JSR Corp. (Japan)
Tsutomu Shimokawa, JSR Corp. (Japan)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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