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Proceedings Paper

Formation mechanism of 193nm immersion defects and defect reduction strategies
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Paper Abstract

The formation mechanism of various 193nm immersion-related defects is investigated. The experimental results are reviewed and compared to the simulation results, which enables us to form a clear picture of how the immersion defects are generated. Based on the understanding of defects mechanisms, a series of the defect reduction measures is proposed for the 193nm immersion process.

Paper Details

Date Published: 26 March 2008
PDF: 9 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231Y (26 March 2008); doi: 10.1117/12.771221
Show Author Affiliations
Yayi Wei, Qimonda North America Corp. (United States)
Stefan Brandl, Qimonda North America Corp. (United States)
Frank Goodwin, Qimonda North America Corp. (United States)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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