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Proceedings Paper

Immersion resist process for 32-nm node logic devices
Author(s): Tatsuhiko Ema; Koutaro Sho; Hiroki Yonemitsu; Yuriko Seino; Hiroharu Fujise; Akiko Yamada; Shoji Mimotogi; Yosuke Kitamura; Satoshi Nagai; Kotaro Fujii; Takashi Fukushima; Toshiaki Komukai; Akiko Nomachi; Tsukasa Azuma; Shinichi Ito
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Paper Abstract

Key issues of resist process design for 32nm node logic device were discussed in this paper. One of them is reflectivity control in higher 1.3NA regime. The spec for the reflectivity control is more and more severe as technology node advances. The target of reflectivity control over existent substrate thickness variation is 0.4%, which was estimated from our dose budget analysis. Then, single BARC process or stacked mask process (SMAP) was selected to each of the critical layers according to the substrate transparency. Another key issue in terms of material process was described in this paper, that is spin-on-carbon (SOC) pattern deformation during substrate etch process. New SOC material without any deformation during etch process was successfully developed for 32nm node stacked mask process (SMAP). 1.3NA immersion lithography and pattern transfer performance using single BARC

Paper Details

Date Published: 31 March 2008
PDF: 12 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230E (31 March 2008); doi: 10.1117/12.771008
Show Author Affiliations
Tatsuhiko Ema, Toshiba Corp. (Japan)
Koutaro Sho, Toshiba Corp. (Japan)
Hiroki Yonemitsu, Toshiba Corp. (Japan)
Yuriko Seino, Toshiba Corp. (Japan)
Hiroharu Fujise, Toshiba Corp. (Japan)
Akiko Yamada, Toshiba Corp. (Japan)
Shoji Mimotogi, Toshiba Corp. (Japan)
Yosuke Kitamura, Toshiba Corp. (Japan)
Satoshi Nagai, Toshiba Corp. (Japan)
Kotaro Fujii, Toshiba Corp. (Japan)
Takashi Fukushima, Toshiba Corp. (Japan)
Toshiaki Komukai, Toshiba Corp. (Japan)
Akiko Nomachi, Toshiba Corp. (Japan)
Tsukasa Azuma, Toshiba Corp. (Japan)
Shinichi Ito, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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